Schottky barriers for spin injection

Date:

2005-2010

Themes:

Quantum Electronics and Spintronics, Nanoelectronics

Funding:

EPSRC (Platform grant on high frequency Si nanodevices)

Electrodeposition is being used to fabricate magnetic microstructures directly on patterned n-type Si wafers of various substrate resistivities. The Ni-Si Schottky barrier is characterized and found to be of very high quality for relatively low Si resistivities (1-2 Ohmcm with leakage currents order of magnitudes lowe than for sputtered barriers. This shows that electrodeposition of magnetic materials on Si is a viable fabrication technique for magnetoresistance and spintronics applications. This technique will be used to investigate spin injection into Si and to fabricate spin transistors

Primary investigator

• mk09v

Secondary investigators

• mkh05r
• xl04r

Associated research groups

• Nano Research Group
• Southampton Nanofabrication Centre