Phase Change Memory Materials via Non-Aqueous Electrodeposition into Nano-structured Templates

Date:

2010-2021

Themes:

Nanoelectronics, Quantum Electronics and Spintronics, Materials & Technology

Funding:

EPSRC (EP/I010890/1), EPSRC (EP/N035437/1)

This project is concerned with developing non-aqueous electrochemical methods and suitably tailored reagents to facilitate spatially selective electrodeposition of binary (e.g. In2(Se,Te)3, Sb2(Se,Te)3, Ge(Se,Te)) and ternary chalcogenide materials (e.g. Ge2Sb2Te5, doped Sb2Te3) for applications in solid-state phase change memory (PCM). The key objectives are to demonstrate successful selective deposition of the target materials inside nano-scale (down to 2 nm) confined cell structures and to establish the effect of down-scaling pore size on the deposition process. Successful electrodeposition of well-defined compound semiconductor alloy compositions of these types will provide a significant new enabling technology which could also have a major impact on the other applications requiring semiconductor alloy deposition on a nano-scale.

Primary investigators

• Kees De Groot
• Phil Bartlett (Chemistry)
• Gill Reid (Chemistry)
• Andrew Hector (Chemistry)
• David Smith (Physics)
• Ruomeng Huang
• Yasir Noori

Secondary investigators

• Katarina Cicvaric
• Daniel Newbrook

Partners

• University of Warwick
• University of Nottingham

Associated research group

• Sustainable Electronic Technologies