This is now an inactive research group it's members have moved on. You can find them at their new research groups:
- ESD - http://esd.ecs.soton.ac.uk
- ESS - http://ess.ecs.soton.ac.uk
ECS Intranet:
Schottky barriers for spin injection
Electrodeposition is being used to fabricate magnetic microstructures directly on patterned n-type Si wafers of various substrate resistivities. The Ni-Si Schottky barrier is characterized and found to be of very high quality for relatively low Si resistivities (1-2 Ohmcm with leakage currents order of magnitudes lowe than for sputtered barriers. This shows that electrodeposition of magnetic materials on Si is a viable fabrication technique for magnetoresistance and spintronics applications. This technique will be used to investigate spin injection into Si and to fabricate spin transistors
Type: Normal Research ProjectResearch Groups: Nano Research Group, Southampton Nanofabrication Centre
Themes: Quantum Electronics and Spintronics, Nanoelectronics
Dates: 1st April 2005 to 1st April 2010
Funding
- EPSRC Platform grant on high frequency Si nanodevices
Principal Investigators
- mk09v
Other Investigators
- mkh05r
- xl04r