ECS Intranet:
Semi-insulating Si for RF circuits
Semi-insulating silicon substrates are very attractive as handle wafers in Silicon On Insulator (SOI) technologies because they would provide very low-absorption substrates for radio frequency (RF) and monolithic microwave integrated circuits. We have shown both theoretically and experimentally that deep level doping with transition metals is an excellent method to create this semi-insulating Si. This work aims to study the science and engineering of high resistivity silicon substrates for high frequency integrated circuits such that it can be applied industrially. The project aims to better understand the diffusion and doping versus resistivity relations of appropriate deep level impurities (including Mn), and hence to maximise the resistivity of the silicon handle wafer. Contamination issues arising from the deep level impurities will be addressed by investigating diffusion barriers and also by developing a back-end processing approach that takes advantage of the high diffusivity of some deep level impurities. SOI wafers will be fabricated on semi-insulating silicon substrates and detailed high frequency characterisation will be carried out.
Type: Normal Research Project
Research Group: Sustainable Electronic Technologies
Themes: System design and RF, Nanoelectronics
Dates: 1st July 2008 to 30th June 2016
Relevant Links
- Enhancement of resistivity of Czochralski silicon by deep level manganese doping
- Reduced microwave attenuation in coplanar waveguides using deep level impurity compensated Czochralski-silicon substrates
- Analytical and numerical model of spiral inductors on high resistivity silicon substrates
Partners
- University of Oxford
- MEMC Electronic Materials
- MHS-Electronics/ Plus Semi
Funding
- EPSRC
Principal Investigators
Other Investigators
- pa
- km2
- aa08r
- Dr Peter Wilshaw (Oxford)
You can edit the record for this project by visiting http://secure.ecs.soton.ac.uk/db/projects/editproj.php?project=506
