ECS Intranet:
Phase Change Memory Materials via Non-Aqueous Electrodeposition into Nano-structured Templates
This project is concerned with developing non-aqueous electrochemical methods and suitably tailored reagents to facilitate spatially selective electrodeposition of binary (e.g. In2(Se,Te)3, Sb2(Se,Te)3, Ge(Se,Te)) and ternary chalcogenide materials (e.g. Ge2Sb2Te5, doped Sb2Te3) for applications in solid-state phase change memory (PCM). The key objectives are to demonstrate successful selective deposition of the target materials inside nano-scale (down to 2 nm) confined cell structures and to establish the effect of down-scaling pore size on the deposition process. Successful electrodeposition of well-defined compound semiconductor alloy compositions of these types will provide a significant new enabling technology which could also have a major impact on the other applications requiring semiconductor alloy deposition on a nano-scale.
Homepage: https://www.southampton.ac.uk/adept/index.page
Type: Normal Research Project
Research Group: Sustainable Electronic Technologies
Themes: Nanoelectronics, Quantum Electronics and Spintronics, Materials & Technology
Dates: 1st February 2010 to 1st July 2021
Relevant Links
- Growth and characterization of a novel In2Se3 structure
- Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5 phase change memory†
- Contact resistance measurement of Ge2Sb2Te5 phase change material to TiN electrode by spacer etched nanowire
Partners
- University of Warwick
- University of Nottingham
Funding
- EPSRC
- EPSRC
Principal Investigators
- Professor CH "Kees" De Groot
- Phil Bartlett (Chemistry)
- Gill Reid (Chemistry)
- Andrew Hector (Chemistry)
- David Smith (Physics)
- Ruomeng Huang
- Yasir Noori
Other Investigators
- Katarina Cicvaric
- Daniel Newbrook
You can edit the record for this project by visiting http://secure.ecs.soton.ac.uk/db/projects/editproj.php?project=844
