The University of Southampton
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Electronics and Computer Science
Email:
f.m.simanjuntak@soton.ac.uk

Dr Firman Simanjuntak 

Dr. Firman is a scientist at the Centre of Electronics Frontiers, University of Southampton (UoS - UK). He received full scholarships for his M.Sc. degree in Mechanical Engineering and Ph.D. degree in Materials Science & Engineering from Taiwan top universities. He has been recently granted the prestigious Marie Skłodowska-Curie European Fellowship to run MENESIS project (Memristor-Enabled NEuromorphic System for Intelligence in Space) delivering cloud servers technology in the sky (satellites, space stations, interplanetary probes, etc). He is an expert in the synthesis and characterization of nanostructured materials, and his research interests are memristive and sensor technologies, as well as materials processing and analysis for advanced electronics. Prior to joining the UoS, he was with World Premier  – Advanced Institute for Materials Research, Tohoku University - Japan, where he pioneered neutral ions irradiations technique to control the synaptic behavior of memristor devices. He has published more than fifty peer-reviewed research articles and conference papers within the last five years.  Currently, his work focuses on AI-hardware accelerator for space and nuclear applications.

Research

Research interests

Materials processing and analysis for electronic devices; data/energy storage, sensors, neuromorphic computing.

Publications

Simanjuntak, Firman Mangasa, Ohno, Takeo, Chandrasekaran, Sridhar, Tseng, Tseung-Yuen and Samukawa, Seiji (2020) Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications. Nanotechnology, 31 (26). (doi:10.1088/1361-6528/ab7fcf/meta).

Singh, Pragya, Simanjuntak, Firman Mangasa, Wu, Chung Yi, Kumar, Amit, Zan, Hsiao-Wen and Tseng, Tseung-Yuen (2020) Sensing performance of gas sensors fabricated from controllably grown ZnO-based nanorods on seed layers. Journal of Materials Science, 55 (21), 8850–8860. (doi:10.1007/s10853-020-04659-7).

Simanjuntak, Firman (2021) Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure. Applied Physics Letters. (In Press)

Rajasekaran, Sailesh, Simanjuntak, Firman Mangasa, Panda, Debashis, Chandrasekaran, Sridhar, Aluguri, Rakesh, Saleem, Aftab and Tseng, Tseung-Yuen (2020) Fast, highly flexible, and transparent TaOx-based environmentally robust memristors for wearable and aerospace applications. ACS Applied Electronic Materials, 3131-3140. (doi:10.1021/acsaelm.0c00441).

Chang, Lung-Yu, Simanjuntak, Firman Mangasa, Hsu, Chun-Ling, Chandrasekaran, Sridhar and Tseng, Tseung-Yuen (2020) Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices. Applied Physics Letters, 117. (doi:10.1063/5.0014829).

Gapsari, Femiana, Madurani, Kartika A., Simanjuntak, Firman Mangasa, Andoko, Andoko, Wijaya, Hastono and Kurniawan, Fredy (2019) Corrosion inhibition of honeycomb waste extracts for 304 stainless steel in sulfuric acid solution. Materials, 12 (13), [2120]. (doi:10.3390/ma12132120).

Panda, Debashis, Simanjuntak, Firman M., Chandrasekaran, Sridhar, Pattanayak, Bhaskar, Singh, Pragya and Tseng, Tseung-Yuen (2020) Barrier layer induced switching stability in Ga:ZnO nanorods based electrochemical metallization memory. IEEE Transactions on Nanotechnology, 764-768. (doi:10.1109/TNANO.2020.3029588).

Simanjuntak, Firman Mangasa, Panda, Debashis, Tsai, Tsung-Ling, Lin, Chun-An, Wei, Kung-Hwa and Tseng, Tseung-Yuen (2015) Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode. Journal of Materials Science, 6961-6969. (doi:10.1007/s10853-015-9247-y).

Simanjuntak, Firman Mangasa, Ohno, Takeo and Samukawa, Seiji (2019) Film-nanostructure-controlled inerasable-to-erasable switching transition in ZnO-based transparent memristor devices: sputtering-pressure dependency. ACS Applied Electronic Materials, 2184-2189. (doi:10.1021/acsaelm.9b00617).

Simanjuntak, Firman Mangasa, Ohno, Takeo and Samukawa, Seiji (2019) Neutral oxygen beam treated ZnO-based resistive switching memory device. ACS Applied Electronic Materials, 18-24. (doi:10.1021/acsaelm.8b00055).

Djarot, Darmadi B., Gapsari, Femiana, Lobo, Osmar Buntu and Simanjuntak, Firman Mangasa (2020) Stress corrosion cracking threshold for dissimilar capacitive discharge welding joint with varied surface geometry. Applied Sciences. (doi:10.3390/app10062180).

Chandrasekaran, Sridhar, Simanjuntak, Firman Mangasa, Saminathan, R., Panda, Debashis and Tseng, Tseung-Yuen (2019) Improving linearity by introducing Al in HfO2 as a memristor synapse device. Nanotechnology. (doi:10.1088/1361-6528/ab3480).

Chandrasekaran, Sridhar, Simanjuntak, Firman Mangasa, Panda, Debashis and Tseng, Tseung-Yuen (2019) Enhanced synaptic linearity in ZnO-based invisible memristive synapse by introducing double pulsing scheme. IEEE Transactions on Electron Devices, 66 (11), 4722 - 4726. (doi:10.1109/TED.2019.2941764).

Simanjuntak, Firman Mangasa, Ohno, Takeo and Samukawa, Seiji (2019) Influence of rf sputter power on ZnO film characteristics for transparent memristor devices. AIP Advances. (doi:10.1063/1.5125665).

Simanjuntak, Firman Mangasa, Chandrasekaran, Sridhar, Lin, Chun-Chieh and Tseng, Tseung-Yuen (2019) ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices. APL Materials, 7, [051108]. (doi:10.1063/1.5092991).

Simanjuntak, F.M., Chandrasekaran, S., Lin, C.C. and Tseng, T.Y. (2018) Switching failure mechanism in zinc peroxide-based programmable metallization cell. Nanoscale Research Letters. (doi:10.1186/s11671-018-2743-7).

Chandrasekaran, Sridhar, Simanjuntak, Firman Mangasa and Tseng, Tseung-Yuen (2018) Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer. Japanese Journal of Applied Physics, 57 (45), [04FE10]. (doi:10.7567/jjap.57.04fe10).

Singh, Pragya, Simanjuntak, Firman Mangasa, Kumar, Amit and Tseng, Tseung-Yuen (2018) Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory. Thin Solid Films, 828-833. (doi:10.1016/j.tsf.2018.03.027).

Saleem, Aftab, Simanjuntak, Firman, Chandrasekaran, Sridhar, Rajasekaran, Sailesh, Tseng, Tseung-Yuen and Prodromakis, Themis (2021) Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications. Applied Physics Letters, 118 (11), [1121031]. (doi:10.1063/5.0041808).

Simanjuntak, Firman Mangasa, Singh, Pragya, Chandrasekaran, Sridhar, Lumbantoruan, Franky Juanda, Yang, Chih-Chieh, Huang, Chu-Jie, Lin, Chun-Chieh and Tseng, Tseung-Yuen (2017) Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell. Semiconductor Science and Technology, 32, [124003]. (doi:10.1088/1361-6641/aa9598).

Panda, D., Simanjuntak, F.M. and Tseng, T.-Y. (2016) Temperature induced complementary switching in titanium oxide resistive random access memory. AIP Advances, 6, [075314]. (doi:10.1063/1.4959799).

Chandrasekaran, Sridhar, Simanjuntak, Firman Mangasa, Tsai, Tsung-Ling, Lin, Chun-An and Tseng, Tseung-Yuen (2017) Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory. Applied Physics Letters, 111, [113108]. (doi:10.1063/1.5003622).

Aluguri, R., Kumar, D., Simanjuntak, F. M. and Tseng, T.-Y. (2017) One bipolar transistor selector - One resistive random access memory device for cross bar memory array. AIP Advances. (doi:10.1063/1.4994948).

Simanjuntak, Firman Mangasa, Chandrasekaran, Sridhar, Pattanayak, Bhaskar, Lin, Chun-Chieh and Tseng, Tseung-Yuen (2017) Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell. Nanotechnology. (doi:10.1088/1361-6528/aa80b4).

Simanjuntak, Firman Mangasa, Pattanayak, Bhaskar, Lin, Chun-Chieh and Tseng, Tseung-Yuen (2017) Resistive switching characteristics of hydrogen peroxide surface oxidized ZnO-based transparent resistive memory devices. ECS Transactions, 77 (4). (doi:10.1149/07704.0155ecst).

Simanjuntak, Firman Mangasa, Panda, Debashis, Wei, Kung-Hwa and Tseng, Tseung-Yuen (2016) Status and prospects of ZnO-based resistive switching memory devices. Nanoscale Research Letters. (doi:10.1186/s11671-016-1570-y).

Chandrasekaran, Sridhar, Simanjuntak, Firman Mangasa, Aluguri, Rakesh and Tseng, Tseung-Yuen (2018) The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2 -based resistive switching random access memory devices. Thin Solid Films, 660, 777-781. (doi:10.1016/j.tsf.2018.03.065).

Simanjuntak, Firman Mangasa, Panda, Debashis, Tsai, Tsung-Ling, Lin, Chun-An, Wei, Kung-Hwa and Tseng, Tseung-Yuen (2015) Enhanced switching uniformity in AZO/ZnO1−x/ITO transparent resistive memory devices by bipolar double forming. Applied Physics Letters, 107, [033505]. (doi:10.1063/1.4927284).

Prinzie, Jeffrey, Simanjuntak, Firman Mangasa, Leroux, Paul and Prodromakis, Themis (2021) Low-power electronic technologies for harsh radiation environments. Nature Electronics, 4 (4), 243-253. (doi:10.1038/s41928-021-00562-4).

Taufiq, Ahmad, Saputro, Rosy Eko, Susanto, Hendra, Hidayat, Nurul, Sunaryono, Sunaryono, Amrillah, Tahta, Wijaya, Husni Wahyu, Mufti, Nandang and Simanjuntak, Firman Mangasa (2020) Synthesis of Fe3O4/Ag nanohybrid ferrofluids and their applications as antimicrobial and antifibrotic agents. Heliyon, 6 (12), [e05813]. (doi:10.1016/j.heliyon.2020.e05813).

Simanjuntak, Firman (2021) Dataset: Conduction channel configuration controlled digital and analog response in TiO2-based inorganic memristive artificial synapses. University of Southampton doi:10.5258/SOTON/D2037 [Dataset]

Simanjuntak, Firman, Hsu, Chun-Ling, Abbey, Thomas and Hsu, Chun-Ling (2021) Conduction channel configuration controlled digital and analog response in TiO2-based inorganic memristive artificial synapses. APL Materials, [121103].

Simanjuntak, Firman, Panidi, Ioulianna, Talbi, Fayzah, Kerrigan, Adam, Lazarov, Vlado K. and Prodromakis, Themistoklis (2022) Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices. APL Materials, 10 (3), [031103]. (doi:10.1063/5.0076903).

Lumbantoruan, Franky, Zheng, Xia-Xi, Huang, Jian-Hao, Huang, Ren-Yao, Mangasa, Firman, Chang, Edward-Yi, Tu, Yung-Yi and Lee, Ching-Ting (2018) Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD. Journal of Crystal Growth, 501, 7-12. (doi:10.1016/j.jcrysgro.2018.08.015).

Contact

Email: f.m.simanjuntak@soton.ac.uk

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