The University of Southampton
Telephone:
+442380599312

Dr Yoshishige Tsuchiya 

Publications

Kawata, Y., Yamaguchi, T., Ishibashi, K., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Observation of quantum level spectrum for silicon double single-electron transistors. Applied Physics Express, 1, 53705.

Akhtar, S., Usami, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2008) Vapor–Liquid–Solid Growth of Small- and Uniform-Diameter Silicon Nanowires at Low Temperature from Si2H6. Applied Physics Express, 1, 14003.

Yamahata, G., Tsuchiya, Yoshishige, Oda, S., Durrani, Z.A.K. and Mizuta, Hiroshi (2008) Control of electrostatic coupling observed for silicon double quantum dot structures. Japanese Journal of Applied Physics, 47, 4820-4826.

Tanaka, A., Tsuchiya, Yoshishige, Usami, K., Saito, S., Arai, T., Mizuta, Hiroshi and Oda, S. (2008) Synthesis of assembled nanocrystalline Si dots film through the Langmuir-Blodgett technique. Japanese Journal of Applied Physics, 47, 3731-3734.

Ogi, J., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge. Microelectronic Engineering, 85 (5-6), 1410-1412. (doi:10.1016/j.mee.2008.01.068).

Manoharan, M., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation. Applied Physics Letters, 92 (9), 92110. (doi:10.1063/1.2891063).

Manoharan, M., Kawata, Y., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Strongly-coupled multiple-dot characteristics in dual recess structured silicon channe. Journal of Applied Physics, 103 (4), 43719. (doi:10.1063/1.2885343).

Nagami, T., Mizuta, Hiroshi, Momo, N., Tsuchiya, Yoshishige, Saito, S., Arai, T., Shimada, T. and Oda, S. (2007) Three-dimensional numerical analysis of switching properties of high-speed and non-volatile nanoelectromechanical memory. IEEE Transactions on Electron Devices, ED-54 (No. 5), 1132-1139.

Hippo, D., Urakawa, K., Kawata, Y., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Koshida, N. and Oda, S. (2007) New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures. Japanese Journal of Applied Physics, 46, 633-637.

Kawata, Y., Khalafalla, M., Usami, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2007) Integration of Tunnel-Coupled Double Nanocrystalline Silicon Quantum Dots with a Multiple-Gate Single-Electron Transistor. Japanese Journal of Applied Physics, 46, 4386-4389.

Tsuchiya, Yoshishige, Takai, K., Momo, N., Nagami, T., Yamaguchi, S., Shimada, T., Mizuta, Hiroshi and Oda, S. (2006) Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots. Journal of Applied Physics, 100, 94306.

Rafiq, M., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S., Uno, S., Durrani, Z. and Milne, W. (2006) Hopping conduction in size-controlled Si nanocrystals. Journal of Applied Physics, 100, 14303.

Tanaka, A., Yamahata, G., Tsuchiya, Yoshishige, Usami, K., Mizuta, Hiroshi and Oda, S. (2006) High-density assembly of nanocrystalline silicon quantum dots. Current Applied Physics, 6, 344-347.

Zheng, Y., Mizuta, Hiroshi, Tsuchiya, Yoshishige, Endo, M., Sato, D. and Oda, S. (2005) In situ real-time spectroscopic ellipsometry study of HfO2 thin films grown by using the pulsed-source MOCVD. Journal of Applied Physics, 97, 23527.

Rafiq, M., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S., Uno, S., Durrani, Z. and Milne, W. (2005) Charge injection and trapping in silicon nanocrystals. Applied Physics Letters, 87, 182101.

Tsuchiya, Yoshishige, Matsuda, S., Nagami, T., Saito, S., Arai, T., Shimada, T., Oda, S. and Mizuta, Hiroshi (2008) Switching properties of electromechanically-bistable and multistable bridges for nonvolatile memory applications. IEEE Silicon Nanoelectronics Workshop, Honolulu. M0415 .

Sawai, S., Uno, S., Okamoto, M., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Atomistic study of phonon states in hydrogen-terminated Si ultra-thin films. IEEE Silicon Nanoelectronics Workshop, Honolulu. M0200 .

Ogi, J., Manoharan, M., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Anomalous suppression of single-electron tunneling observed for Si nanobridge transistors with a suspended quantum dot cavity. IEEE Silicon Nanoelectronics Workshop, Honolulu. P1-27 .

Nagami, T., Tsuchiya, Yoshishige, Matsuda, S., Saito, S., Arai, T., Shimada, T., Mizuta, Hiroshi and Oda, S. (2008) Transient response analysis of programming/readout characteristics for NEMS memory. IEEE Silicon Nanoelectronics Workshop, Honolulu. M0430 .

Manoharan, M., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistor? IEEE Silicon Nanoelectronics Workshop, Honolulu. P1-22 .

Kawata, Y., Yamaguchi, T., Ishibashi, K., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Observation of quantum level spectrum for silicon double single-electron transistors. IEEE Silicon Nanoelectronics Workshop, Honolulu. S0245 .

Yamahata, G., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2008) Electron transport through silicon multiple quantum dot array devices. IEEE Silicon Nanoelectronics Workshop, Honolulu. S0445 .

Hippo, D., Urakawa, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Koshida, N. and Oda, S. (2008) Mechanism of One-Directional Nano Etching in Silicon Using Magnetic-Field-Assisted Anodization. Porous Semiconductors Science and Technology 2008, Mallorca.

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S. (2008) Hybrid silicon nanotechnologies for advanced information processing. International Conference on Nano and Microelectronics (ICONAME2008), Pondicherry. pp 41-45 .

Ogi, J., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2007) Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge. 33rd International Conference on Micro- and Nani-Engineering (MNE2007), Copenhagen.

Yamahata, G., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2007) Control of electrostatic coupling observed for Si double quantum dot structures. 39th International Conference on Solid State Devices and Materials (SSDM2007), Tsukuba. pp598-599 .

Kawata, Y., Nishimoto, S., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2007) Study of Single-Charge Polarization on two Charge Qubits Integrated onto a Double Single-Electron Transistor Readout. 39th International Conference on Solid State Devices and Materials (SSDM2007), Tsukuba. pp 1126-1127 .

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S. (2007) Functional silicon nanoelectromechanical information processing devices. Frontier Process Workshop 2007, Tsukuba. pp 65-86 .

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S. (2007) Frontier Process Workshop 2007. International Workshop on “Emerging non volatile memories, Munich.

Manoharan, M., Kawata, Y., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2007) Observation of strongly-coupled multiple-dot characteristics in the dual recess structured silicon channel with different oxidation conditions. IEEE Silicon Nanoelectronics Workshop, Kyoto. pp 151-152 .

Higashijima, S., Sawai, S., Tsuchiya, Yoshishige, Okamoto, M., Mizuta, Hiroshi and Oda, S. (2007) DFT Simulation of Dynamic Charge States in Double Silicon Quantum Dots. IEEE Silicon Nanoelectronics Workshop, Kyoto. pp 169-170 .

Tsuchiya, Yoshishige, Kurihara, T., Saito, D., Niikura, H., Mizuta, Hiroshi and Oda, S. (2007) High-speed and Non-volatile Memory Devices Using a Macroscopic Polarized Stack Consisting of Double Floating Gates Interconnected with Engineered Tunnel Oxide Barriers. IEEE Silicon Nanoelectronics Workshop, Kyoto. pp 145-146 .

Kawata, Y., Manoharan, M., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2007) Fabrication and Characterization of Double Single-Electron Transistors as a Readout for Charge Qubits. IEEE Silicon Nanoelectronics Workshop, Kyoto. pp 119-120 .

Sawai, S., Mizuta, Hiroshi, Higashijima, S., Uno, S., Okamoto, M., Tsuchiya, Yoshishige and Oda, S. (2007) Ab-initio simulation of phonon properties of ultra-thin silicon films. International Symposium on Frontiers in Computational Science of Nanoscale Transport, Tokyo. pp 97-98 .

Cheong, H. -J., Tanaka, A., Hippo, D., Usami, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2007) Light emission from size reduced nanocrystal silicon quantum dots. CLEO2007.

Tsuchiya, Yoshishige, Ikezawa, K., Nakatsukasa, T., Inaba, N., Usami, K., Mizuta, Hiroshi and Oda, S. (2007) Study of silicon nanodot formation in pulsed-gas VHF plasma process. 3rd International Conference on Advanced Materials and Nanotechnology (AMN-3, Wellignton. p 436 .

Tanaka, A., Tsuchiya, Yoshishige, Usami, K., Saito, S., Arai, T., Mizuta, Hiroshi and Oda, S. (2007) Nanocrystalline Si dot assembly based on the Langmuir-Blodgett method. 3rd International Conference on Advanced Materials and Nanotechnology (AMN-3), Wellington. p 543 .

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S. (2007) Physics and applications of Si-based nanoelectromechanical information devices (Plenary Talk). 3rd International Conference on Advanced Materials and Nanotechnology (AMN-3), Wellington. p334 .

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S. (2006) Top-down and bottom-up approaches towards silicon nanoelectronics. Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD06), Perth. FT-3 .

Kawata, Y., Khalafalla, M.A.H., Usami, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2006) Tunnel-coupled double nanocrystalline Si quantum dots integrated into a single-electron transistor. 2006 International Conference on Solid State Devices and Materials, Yokohama, Japan. 11 - 14 Sep 2006. pp 812-813 .

Hippo, D., Kawata, Y., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S., Urakawa, K. and Koshida, N. (2006) Fabrication of silicon 3D photonic crystal structures in 100nm scale using double directional etching method. Conference on lasers and electro-optics / Quantum electronics and laser science conference, Long Beach. p. 114 .

Ogi, J., Mono, N., Khalafalla, M. A. H., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2006) Fabrication and evaluation of Si nanobridge transistor. IEEE Silicon Nanoelectronics Workshop, Honolulu. pp 123-124 .

Nagami, T., Momo, N., Tsuchiya, Yoshishige, Saito, S., Arai, T., Shimada, T., Mizuta, Hiroshi and Oda, S. (2006) Electro-mechanical simulation of programming / readout characteristics for NEMS memory. IEEE Silicon Nanoelectronics Workshop, Honolulu. pp. 105-106 .

Momo, N., Nagami, T., Matsuda, S., Tsuchiya, Yoshishige, Saito, S., Arai, T., Kimura, Y., Shimada, T., Mizuta, Hiroshi and Oda, S. (2006) Fabrication and characterization of nanoscale suspended floating gates for NEMS memory. IEEE Silicon Nanoelectronics Workshop, Honolulu. pp 109-110 .

Hippo, D., Chong, H. -J., Tanaka, A., Kawata, Y., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S., Urakawa, K. and Koshida, N. (2005) A new design of nanocrystalline silicon optical devices based on 3-dimensional photonic crystal structures. 2nd International Conference on Group IV Photonics, Antwerp.

Rafiq, M. A., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Uno, S., Durrani, Z. A. K. and Milne, W. I. (2005) Temperature dependence of space charge limited current (SCLC) in thin films of silicon nanocrystals. 2005 International Conference on Solid State Devices and Materials, Kobe, Japan. 11 - 14 Sep 2005. pp 424-425 .

Tanaka, A., Yamahata, G., Tsuchiya, Yoshishige, Usami, K., Mizuta, Hiroshi and Oda, S. (2005) Formation of nanocrystalline silicon quantum dot arrays. 12th International Conference on Composite / Nano Engineering, Tenerife.

Kurokawa, Y., Higashijima, S., Tsuchiya, Yoshishige, Okamoto, M., Mizuta, Hiroshi and Oda, s. (2005) Atomistic simulation of quantum transport in nanoscale silicon transistors. 15th Workshop on Modelling and Simulation of Electron Devices, Pisa. pp 19 -20 .

Kurokawa, Y., Higashijima, S., Tsuchiya, Yoshishige, Okamoto, M., Mizuta, Hiroshi and Oda, S. (2005) Electronic states and quantum transport in Si nanorod transistors. IEEE Silicon Nanoelectronics Workshop, , Kyoto, Japan.

Higashijima, S., Kurokawa, Y., Tsuchiya, Yoshishige, Okamoto, M., Mizuta, Hiroshi and Oda, S. (2005) Ab-initio method of designing artificial quantum bits. 15th Workshop on Modelling and Simulation of Electron Devices, Pisa. pp 19-20 .

Higashijima, S., Kurokawa, Y., Tsuchiya, Yoshishige, Okamoto, M., Mizuta, Hiroshi and Oda, S. (2005) Ab-initio calculations of electronic states in nano-crystalline Si quantum dots. IEEE Silicon Nanoelectronics Workshop, , Kyoto, Japan.

Yamahata, G., Tanaka, A., Kawata, Y., Tsuchiya, Yoshishige, Saito, S., Arai, T., Mizuta, Hiroshi and Oda, S. (2005) Bottom-up fabrication of Si nanodot transistors using the nc-Si dots solution. IEEE Silicon Nanoelectronics Workshop, , Kyoto, Japan. 2 pp .

Nagami, T., Momo, N., Tsuchiya, Yoshishige, Saito, S., Arai, T., Shimada, T., Mizuta, Hiroshi and Oda, S. (2005) Mechanical property analysis and structural optimization for NEMS memory devices. IEEE Silicon Nanoelectronics Workshop, , Kyoto, Japan.

Tanaka, A., Tsuchiya, Yoshishige, Usami, K., Mizuta, Hiroshi and Oda, S. (2005) High-Density Assembly of Nanocrystalline Silicon Quantum Dots. 2nd International Conference on Advanced Materials and Nanotechnology, Queenstown.

Tanaka, A., Yamahata, G., Tsuchiya, Yoshishige, Usami, K., Mizuta, Hiroshi and Oda, S. (2005) Assembly of Nanocrystalline Silicon Quantum Dots based on a Colloidal Solution Method. IEEE Conference on Nanotechnology, IEEE-NANO, Nagoya, Japan. 10 - 14 Jul 2005.

Mizuta, Hiroshi, Khalafalla, M., Durrani, Z. A. K., Uno, S., Koshida, N., Tsuchiya, Yoshishige and Oda, S. (2004) Bottom-up Silicon Nanoelectronics. 2004 7th International Conference on Solid-State and Integrated Circuits Technology, Beijing. pp 864-868 .

Tsuchiya, Yoshishige, Fujita, H., Mizuta, Hiroshi, Nohira, H., Hattori, T. and Oda, S. (2004) Pr-silicate Ultrathin Films for High-k Gate Dielectrics Prepared by Metal-Organic Chemical Vapor Deposition. 2004 TMS Electronic materials conference and exhibition, Notre Dame. p. 30 .

Fujita, H., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Nohira, H., Hattori, T. and Oda, S. (2004) Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD. 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology, Tokyo.

Salem, M. A., Tsuchiya, Yoshishige, Usami, K., Mizuta, Hiroshi and Oda, S. (2004) Study of charge quantization in individual silicon quantum dots using Kelvin probe Force Microscopy. the 2004 International Conference on Solid State Devices and Materials, Tokyo. pp 884-885 .

Tsuchiya, Yoshishige, Takai, K., Momo, N., Oda, S., Yamaguchi, S., Shimada, T. and Mizuta, Hiroshi (2004) High-speed and Nonvolatile Nano Electromechanical Memory incorporating Si Quantum Dots. 27th International Conference on the Physics of Semiconductors, Flagstaff. p 208 .

Tsuchiya, Yoshishige, Takai, K., Momo, N., Yamaguchi, S., Shimada, T., Koyama, S., Takashima, K., Higo, Y., Mizuta, Hiroshi and Oda, S. (2004) Nano Electromechanical Memory Device using Nanocrystalline Si Dots. 2004 Silicon Nanoelectronics Workshop, Honolulu. pp 101-102 .

Mizuta, Hiroshi, Khalafalla, M., Durrani, Z. A. K., Uno, S., Koshida, N., Tsuchiya, Yoshishige and Oda, S. (2004) Electron Transport and Device Applications of Nanocrystalline Silicon. International Symposium on Nanoscale Materials and Devices, 206th Meeting of the Electrochemical Society, Honolulu. p 1012 .

Tsuchiya, Yoshishige, Iwasa, T., Tanaka, A., Usami, K., Mizuta, Hiroshi and Oda, S. (2004) Formation of an Ordered Array of nc-Si Dots by Using a Solution Droplet Evaporation Method. MRS Spring Meeting. p 277 .

Tsuchiya, Yoshishige, Fujita, H., Sato, D., Endoh, M., Kurosawa, M., Nohira, H., Hattori, T., Mizuta, Hiroshi and Oda, S. (2004) Advanced studies of high-k gate dielectrics toward future generation with equivalent gate oxide thickness of less than 1 nm. 7th China-Japan Symposium on Thin Films, Chengdu Sichuan. pp 118-121 .

Shimada, T., Yamaguchi, S., Ando, M., Nakazato, K., Koshida, N., Takai, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2004) Neosilicon-created new applications. 7th China-Japan Symposium on Thin Films, Chengdu Sichuan. pp 101-104 .

Salem, M. A., Tsuchiya, Yoshishige, Usami, K., Mizuta, Hiroshi and Oda, S. (2004) Nanoscale Observation of Size and Potential for Charged Nanocrystalline Si Dots using KFM. 16th International Vacuum Congress, Venice.

Cheong, H. -J., Hippo, D., Tanaka, A., Usami, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2006) Visible electroluminescence from size-controlled silicon quantum dots. Conference on lasers and electro-optics / Quantum electronics and laser science conference, Long Beach. p 109 .

Salem, M.A., Tsuchiya, Yoshishige, Usami, K., Mizuta, Hiroshi and Oda, S. (2004) Nanoscale Observation of Size and Potential for Charged Nanocrystalline Si Dots using KFM. CREST FEMD Newsletter, 5 (4).

Shimada, T., Ando, M., Yamaguchi, S., Momo, N., Takai, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2004) Nano-electro-mechanical device application of neosilicon. CREST FEMD New Letter, 6 (1), 1-2.

Tsuchiya, Yoshishige, Takai, K., Momo, N., Nagami, T., Mizuta, Hiroshi and Oda, S. (2004) Studies of high-speed non-volatile nanoelectro-mechanical systems memory device using “neosilicon". CREST FEMD Newsletter, 6 (2), 1-2.

Tanaka, A., Tsuchiya, Yoshishige, Usami, K., Mizuta, Hiroshi and Oda, S. (2005) High-density assembly of nanocrystalline silicon quantum dots. CREST FEMD Newsletter, 6 (4), 1-2.

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S. (2007) Silicon nanoelectronics for ‘More than Moore’ and ‘Beyond CMOS’ domains (Invited Talk). 4th TUAT-ECU Joint Symposium on Coherent Photonic Science and Nano Advanced Materials, Tokyo.

Zhou, X., Usami, K., Rafiq, M.A., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2008) Influence of nanocrystal size on the transport properties of Si nanocrystals. Journal of Applied Physics, 104, 24518.

Kawata, Y., Tsuchiya, Yoshishige, Oda, S. and Mizuta, Hiroshi (2008) Study of single-charge polarization on a pair of charge qubits integrated onto silicon double single-electron transistor readout. IEEE Transactions on Nanotechnology, 7 (4).

Yamahata, G, Uchida, K, Oda, S, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2008) Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots. 38th European Solid-State Device Research Conference (ESSDERC), Edinburgh.

Kawata, Y, Oda, S, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2008) Detection of Single-Charge Polarisation in Silicon Double Quantum Dots by Using Serially-Connected Multiple Single-Electron Transistors. 38th European Solid-State Device Research Conference (ESSDERC), Edinburgh.

Ramirez, M.A.G, Yoshimura, Hideo, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2008) Suspended gate silicon nanodot memory. ESSDERC/CIRC Fringe (ESS-Fringe), Edinburgh.

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S (2008) Hybrid silicon nanotechnologies for ‘More-than-Moore’ and ‘Beyond-CMOS’ domains (Plenary Talk). 7th International Conference on Global Research and Education – Inter-Academia, Pecs.

Inaba, N, Nakamine, Y, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Uchida, K, Pereira, R, Stegner, A, Stutzmann, M and Oda, S (2008) Phosphorous-doping in silicon nanocrystals. 34th International Conference on Micro & Nano Engineering, , Athens, Greece. 15 - 19 Sep 2008.

Manoharan, M, Tsuchiya, Yoshishige, Oda, S and Mizuta, Hiroshi (2008) Silicon radio frequency single-electron transistors operating at above 4.2 K. 40th International Conference on Solid State Devices and Materials (SSDM2008).

Hippo, D, Urakawa, K, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Koshida, N and Oda, S (2008) Formation Mechanism of 100 nm-Scale Periodic-Structures in Silicon Using Magnetic-Field-Assisted Anodization. Japanese Journal of Applied Physics, 47, 7398-7402.

Cheong, H.J, Tanaka, A, Hippo, D, Usami, K, Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S (2008) Visible Electroluminescence from Spherical-shaped Silicon Nanocrystals. Japanese Journal of Applied Physics, 47, 8137-8140.

Mizuta, Hiroshi, Nagami, T, Ogi, Jun, Pruvost, B, Ramirez, M.A.G, Yoshimura, Hideo, Tsuchiya, Yoshishige and Oda, S (2008) Co-integration of Silicon Nanodevices and NEMS for Advanced Information Processing (Invited Talk). 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2008), Beijing.

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S (2008) Physics and Applications of Hybrid Silicon Nanoelectromechanical Devices (Plenary Talk). 5th International Symposium on Nanvision Science / 10th Takayanagi Kenjiro Memorial Symposium, Hamamatsu.

Manoharan, M, Tsuchiya, Yoshishige, Oda, S and Mizuta, Hiroshi (2008) Silicon-on-insulator-based radio frequency single-electron transistors operating at temperatures above 4.2 K. Nano Letters, 8 (12), 4648-4652. (doi:10.1021/nl801992j).

Ogi, J, Ferrus, T, Tsuchiya, Yoshishige, Uchida, K, Williams, D, Oda, S and Mizuta, Hiroshi (2009) Study of single-electron transport via suspended double silicon quantum dots. IEEE Silicon Nanoelectronics Workshop 2009, Kyoto. 12 - 13 Jun 2009.

Kurihara, T, Nagahama, Y, Kobayashi, D, Niikura, H, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Nohira, H, Uchida, K and Oda, S (2009) Engineering of heterostructured tunnel barrier for non-volatile memory applications: potential of Pr-based heterostructured barrier as a tunneling oxide. IEEE Silicon Nanoelectronics Workshop 2009, Kyoto. 12 - 13 Jun 2009.

Yamahata, G., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Uchida, K. and Oda, S. (2009) Electron transport through silicon serial triple quantum dots. Solid-State Electronics, 53, 779-785. (doi:10.1016/j.sse.2009.03.009).

Akhtar, S, Tanaka, A, Usami, K, Tsuchiya, Yoshishige and Oda, S (2008) Influence of the crystal orientation of substrate on low temperature synthesis of silicon nanowires from Si2H6. Thin Solid Films, 517, 317-319.

Akhtar, S, Usami, K, Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S (2008) Size-Dependent Structural Characterization of Silicon Nanowires. Japanese Journal of Applied Physics, 47 (6), 5033-5036.

Tsuchiya, Yoshishige, Takai, K, Momo, N, Nagami, T, Yamaguchi, S, Shimada, T, Mizuta, Hiroshi and Oda, S (2005) High-Speed and Non-Volatile Nano Electro-Mechanical Memory Incorporating Si Quantum Dots. In Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, ed. J. Menendez and C. G. Van de Walle,. American Institute of Physics. pp. 1589-1590 .

Li, C., Usami, K., Yamahata, G., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2009) Position-controllable Ge nanowires growth on patterned Au catalyst substrate. Applied Physics Express, 2, 15004. (doi:10.1143/APEX.2.015004).

Kanjanachuchai, S, Tsuchiya, Yoshishige, Usami, K and Oda, S (2004) Nanocrystalline silicon dot displacement using speed-controlled tapping-mode atomic force microscopy. Microelectronic Engineering, 73-74, 615-619.

Garcia-Ramirez, Mario A., Yoshimura, Hideo, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2008) Suspended Gate Silicon Nanodots memory. ESSDERC/CIRC Fringe (ESS-Fringe), Edinburgh. p19 .

Tsuchiya, Yoshishige, Endoh, M, Kurosawa, M, Tung, R. T, Hattori, T and Oda, S (2003) Pulsed-Source MOCVD of High-k Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry. Japanese Journal of Applied Physics, 42, 1957-1961.

Hanaguri, T, Takaki, K, Tsuchiya, Yoshishige and Maeda, A (2003) An instrument for low- and variable-temperature millimeter-wave surface impedance measurements under magnetic fields. Review of Scientific Instruments, 74 (10), 4436-4441.

Takaki, K, Koizumi, A, Hanaguri, T, Nohara, M, Takagi, H, Kitazawa, K, Kato, Y, Tsuchiya, Yoshishige, Kitano, H and Maeda, A (2002) Effects of superconducting gap anisotropy on the flux flow resistivity in Y(Ni1-xPtx)2B2C. Physical Review B, 66, 184511.

Hippo, D, Urakawa, K, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Koshida, N and Oda, S (2009) Spontaneous emission control of silicon nanocrystals by silicon three-dimensional photonic crystal structure fabricated by self-aligned two-directional electrochemical etching method. Materials Chemistry and Physics, 116, 107-111.

Kanjanachuchai, S, Tsuchiya, Yoshishige, Usami, K and Oda, S (2003) Nanocrystalline silicon dots displacement using tapping-mode atomic force microscopy. Micro and Nano Engineering 2003, Cambridge, United Kingdom. 21 - 24 Sep 2003.

Tsuchiya, Yoshishige, Endoh, M and Oda, S (2003) Pulsed-source MOCVD HfO2 ultrathin film growth optimized by in situ ellipsometry monitoring. 2003 International Conference on Solid State Devices and Materials (SSDM2003), Tokyo, Japan. 15 - 17 Sep 2003.

Tsuchiya, Yoshishige, Endoh, M, Kurosawa, M, Tung, R. T, Hattori, T and Oda, S (2002) Atomic layer-by-layer MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry. 2002 International Conference on Solid State Devices and Materials (SSDM2002), Nagoya, Tokyo. 16 - 18 Sep 2002.

Tsuchiya, Yoshishige, Furukawa, R, Suto, T, Nohira, H, Maruizumi, T, Shiraki, Y, Mizuta, Hiroshi and Oda, S (2006) Effect of Post-Deposition Annealing on the Electrical Properties of MOCVD-grown Praseodymium Silicate MIS Diode. 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices – Science and Technology (IWDTF2006), Kawasaki, Japan. 08 - 10 Nov 2006.

Tsuchiya, Yoshishige, Furukawa, R, Kitamura, K, Nohira, H and Oda, S (2008) Pr-Si-O Gate Stack with an Ultrathin Interfacial Layer Grown by MOCVD and PDA under Low O2 Partial Pressure. International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF2008), Tokyo, Japan. 05 - 07 Nov 2008.

Mizuta, Hiroshi, Nagami, Tasuku, Ogi, Jun, Pruvost, Benjamin, Garcia Ramirez, Mario, Yoshimura, Hideo, Tsuchiya, Yoshishige and Oda, Shunri (2008) Co integration of Silicon Nanodevices and NEMS for Advanced Information Processing. 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2008), Beijing.

Mizuta, Hiroshi, Garcia Ramirez, Mario, Arab Hassani, Faezeh, Ghiass, Mohammad Adel, Tsuchiya, Yoshishige, Nagami, T., Pruvost, B., Ogi, J., Sawai, S., Oda, S. and Okamoto, M. (2009) Multi-scale simulation of hybrid silicon nano-electromechanical (NEM) information devices. 8th International Conference on Global Research and Education, Warsaw University of Technology, Warsaw, Poland. 14 - 18 Sep 2009.

Mizuta, Hiroshi, Garcia Ramirez, Mario, Tsuchiya, Yoshishige, Nagami, T, Uchida, K and Oda, S (2009) NEM – MOS Co-integration for Fast & Nonvolatile Memory Applications (Invited Talk). IEEE NANO Satellite Workshop on Emerging Nonvolatile Memories, Genova.

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S (2009) Functional silicon nanoelectronic devices co-integrated with nanoelectromechanical structures. JSAP Symposium on Development of Neosilicon for 'More-than'Moore' Era, Toyama.

Hassani, F.A, Cobianu, C, Armini, S, Petrescu, V, Merken, P, Tsamados, D, Ionescu, A.M, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2009) Design and Analysis of an In-Plane Resonant Nano-Electro-Mechanical Sensor for Sub-Attogram-Level Molecular Mass-Detection. 41st International Conference on Solid State Devices and Materials (SSDM2009), Sendai.

Yoshimura, H, Tsuchiya, Yoshishige, Mizuta, Hiroshi and Koshida, N (2009) Evidence of carrier accumulation effects on the response enhancement in thin-film electrochromic devices. 41st International Conference on Solid State Devices and Materials (SSDM2009), Sendai.

Garcia Ramirez, Mario, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2009) Hybrid circuit analysis of a suspended-gate silicon nanodot memory (SGSNM) cell. 35th International Conference on Micro and Nano Engineering (MNE2009), , Ghent, Belgium. 27 Sep 2009.

Mizuta, Hiroshi, Garcia Ramirez, Mario, Tsuchiya, Yoshishige, Nagami, T, Uchida, K and Oda, S (2009) NEM-MOS Co-integration for Fast & Nonvolatile Memory Applications. (In Press)

Mizuta, Hiroshi, Garcia Ramirez, Mario, Tsuchiya, Yoshishige, Nagami, T, Sawai, S, Oda, S and Okamoto, M (2009) Multi-scale Simulation of Hybrid Silicon Nanoelectromechanical (NEM) Information Systems. Journal of Automation, Mobile Robotics & Intelligent Systems.

Ogi, Jun, Ferrus, T, Kodera, T, Tsuchiya, Yoshishige, Uchida, K, Williams, D, Oda, S and Mizuta, Hiroshi (2009) Electron-phonon interaction in suspended Si double quantum dots. 22nd Int. Microprocess and Nanotechnology Conference (MNC 2009), Sapporo.

Garcia Ramirez, Mario, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2010) Hybrid circuit analysis of a suspended gate silicon nanodot memory (SGSNM) cell. Microelectronic Engineering, 87 (5-8), 1284-1286. (doi:10.1016/j.mee.2009.10.019).

Nagami, T, Tsuchiya, Y, Saito, S, Arai, T, Shimada, T, Mizuta, H and Oda, S (2009) Electro-Mechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory. Japanese Journal of Applied Physics, 48, 114502.

Garcia Ramirez, Mario, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2010) Suspended Gate Silicon Nanodot Memory (SGSNM) cell towards Non-Volatile RAM Memories. International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for "More than Moore" & "Beyond CMOS" era, held in the University of Southampton, UK, University of Southampton.

Tanaka, A, Tsuchiya, Y, Usami, K, Saito, S, Arai, T, Mizuta, H and Oda, S (2008) Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir-Blodgett Technique. Japanese Journal of Applied Physics, 47, 3731-3734.

Manoharan, M., Tsuchiya, Y., Oda, S. and Mizuta, H. (2008) Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors? In 2008 IEEE Silicon Nanoelectronics Workshop. IEEE. 2 pp.- . (doi:10.1109/SNW.2008.5418435).

Cobianu, C., Serban, B., Mihaila, M., Dumitru, V., Hassani, F.A., Tsuchiya, Y., Mizuta, H., Cherman, V., De Wolf, I., Petrescu, V., Santana, J., Dupre, C., Ollier, E., Ernst, T., Andreucci, P., Duraffourg, L., Tsamados, D. and Ionescu, A.M. (2009) Nano-scale resonant sensors for gas and bio detection: expectations and challenges. In 2009 International Semiconductor Conference. IEEE. pp. 259-262 . (doi:10.1109/SMICND.2009.5336553).

Nagami, T, Tsuchiya, Y, Saito, S, Arai, T, Shimada, T, Mizuta, H and Oda, S (2009) Electromechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory. Japanese Journal of Applied Physics, 48, -.

Ogi, Jun, Ghiass, Mohammad Adel, Tsuchiya, Yoshishige, Uchida, K, Oda, S and Mizuta, Hiroshi (2010) Suspended quantum dot fabrication on a heavily-doped silicon nanowire by suppressing unintentional quantum dot formation. Japanese Journal of Applied Physics, 49, 44001.

Ogi, Jun, Ferrus, T, Kodera, T, Tsuchiya, Yoshishige, Uchida, K, Williams, D, Oda, S and Mizuta, Hiroshi (2010) Experimental observation of enhanced electron-phonon interaction in suspended Si double quantum dots. Japanese Journal of Applied Physics, 49, 45203.

Nagami, T, Tsuchiya, Yoshishige, Uchida, K, Mizuta, Hiroshi and Oda, S (2010) Scaling Analysis of Nanoelectromechanical Memory Devices. Japanese Journal of Applied Physics, 49, 44304.

Ogi, Jun, Ferrus, T, Kodera, T, Tsuchiya, Yoshishige, Uchida, K, Williams, D, Oda, S and Mizuta, Hiroshi (2010) Inelastic single-electron tunneling assisted by confined phonons observed for suspended silicon double quantum dots. QDCAM2010, Cambridge.

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S (2010) Hybrid Silicon Nanoelectromechanical Devices: Physics and Applications (Invited Talk). UK-Japan Workshop on Novel Phenomena and Techniques in Semiconductor Nanostructures, Tokyo.

Ogi, Jun, Ferrus, T, Kodera, T, Tsuchiya, Yoshishige, Uchida, K, Williams, D, Oda, S and Mizuta, Hiroshi (2010) Single-electron energy dissipation processes mediated by slab mode phonons observed for suspended silicon double quantum dots. IEEE Silicon Nanoelectronics Workshop, Honolulu.

Mizuta, Hiroshi, Tsuchiya, Yoshishige and Oda, S (2010) Hybrid Silicon Nanotechnologies for Advanced Information Processing and Sensing (Invited Talk). International Symposium on Micro-Nano Multi-Functional Devices, Kawasaki.

Mizuta, Hiroshi, Ogi, Jun, Tsuchiya, Yoshishige and Oda, S (2010) Scaled Silicon Nanoelectromechanical Functional Systems (Keynote Lecture). 7th International Workshop on Functional and Nanostructured Materials FNMA'10, Malta. 15 - 19 Jul 2010.

Mizuta, Hiroshi and Tsuchiya, Yoshishige (2010) NEMS and nanodevices (in Japanese). In, Developing Nanosilicon Technology and Device Applications. CMC Publishing, pp. 108-121.

Ghiass, Mohammad Adel, Armini, Silvia, Carli, Marta, Maestre Caro, Arantxa, Cherman, Vladimir, Ogi, Jun, Oda, Shunri, Moktadir, Zakaria, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2010) Temperature insensitive conductance detection with surface-functionalised silicon nanowire sensors. 36th International Conference on Micro-and Nano-Engineering (MNE) 2010, Genoa, Italy. 18 - 21 Sep 2010.

Mizuta, Hiroshi, Garcia Ramirez, Mario, Arab Hassani, Faezeh, Ghiass, Mohammad Adel, Kalhor, Nima, Moktadir, Zakaria, Tsuchiya, Yoshishige, Sawai, S, Ogi, Jun and Oda, S (2010) Scaled Silicon Nanoelectromechanical (NEM) Hybrid Systems. International Conference on Solid-State and Integrated Circuit Technology (Invited Talk), Shanghai, China. 01 - 04 Nov 2010. (In Press)

Ghiass, Mohammad Adel, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2010) Suspended Silicon Nanostructures for Extremely Sensitive Chemical and Biomolecular Detection. The 3rd ITP International Symposium, Southampton. (In Press)

Ghiass, Mohammad Adel, Armini, Silvia, Carli, Marta, Maestre Caro, Arantxa, Cherman, Vladimir, Ogi, Jun, Oda, Shunri, Moktadir, Zakaria, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2011) Temperature insensitive conductance detection with surface-functionalised silicon nanowire sensors. Microelectronic Engineering, 88 (8), 1753-1756. (doi:10.1016/j.mee.2011.02.063).

Arab Hassani, Feazeh, Cobianu, Cornel, Armini, Silvia, Petrescu, Violeta, Merken, Patrick, Tsamados, Dimitrios, Mihai Ionescu, Adrian, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2011) Numerical Analysis of Zeptogram/Hz-Level Mass Responsivity for In-Plane Resonant Nano-Electro-Mechanical Sensors. Microelectronic Engineering. (In Press)

Cobianu, C, Serban, B, Petrescu, V, Pettine, J, Karabacak, D, Offerman, P, Brongesma, S, Cherman, V, Armini, S, Arab Hassani, Faezeh, Ghiass, Mohammad Adel, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Dupre, C, Duraffourg, L, Koumela, A, Mercier, D, Ollier, E, Tsamados, D and Ionescu, A (2010) Towards nanoscale resonant gas sensors. Annals of the Academy of Romanian Scientists: Series of Science and Technology of Information, 3, 39-60.

Garcia Ramirez, Mario, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2011) Hybrid Numerical Analysis of a high-speed non-volatile Suspended Gate Silicon Nanodot Memory. Journal of Computational Electronics, 10 (1), 248-257. (doi:10.1007/s10825-011-0361-z).

Mizuta, Hiroshi, Husain, Muhammad, Alkhalil, Feras, Lin, Yun, Moktadir, Zakaria, Boden, Stuart, Tsuchiya, Yoshishige, Lambert, Nick, Ferguson, Andrew and Chong, Harold (2011) Silicon nanofabrication for QIP in Southampton (Invited Talk). UK Silicon QIP Meeting, Cambridge.

Husain, Muhammad, Lin, Yun, Alkhalil, Feras, Chong, Harold, Tsuchiya, Yoshishige, Lambert, Nicholas, Ferguson, Andrew and Mizuta, Hiroshi (2011) Fabrication of Silicon-based single spin quantum devices using Hydrogen silsesquioxane electron beam resist. The 37th International Conference on Micro and Nano Engineering, Berlin, Germany. 18 - 22 Sep 2011.

Alkhalil, F. M., Husain, M. K., Lin, Y. P., Chong, H. M. H., Ferguson, A. J., Tsuchiya, Y. and Mizuta, H. (2011) Realization of an integrated double spin qubit device on ultra-thin Silicon-on-insulator. Quantum information processing and communication international conference at ETH Zurich, Zurich. 04 - 08 Sep 2011. (Submitted)

Alkhalil, F. M., Chong, H. M. H., Ferguson, A. J., Tsuchiya, Y. and Mizuta, H. (2010) Design and Analysis of Double Spin Qubits Integrated on Ultra-thin Silicon-on-insulator. ESSDERC, Sevilla, Spain.

Mizuta, Hiroshi, Arab Hassani, Faezeh, Ghiass, Mohammad Adel, Tsuchiya, Yoshishige, Armini, S, Delande, T, Loyo Prado, J, Cherman, V, Dupre, C and Ollier, E (2011) Silicon nanowires for advanced sensing: Electrical and electromechanical characteristics and functionalisation technology. G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices (IS-AHND), Tokyo. 03 - 04 Oct 2011.

Alkhalil, Feras, Chong, Harold, Tsuchiya, Yoshishige, Ferguson, Andrew and Mizuta, Hiroshi (2010) Silicon-based integrated single spin quantum information technology [SISSQIT]. International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for 'More-than-Moore' and 'Beyond CMOS' Era, Southampton, United Kingdom. 01 - 02 Mar 2010.

Mizuta, Hiroshi, Arab Hassani, Faezeh, Ghiass, Mohammad Adel, Garcia Ramirez, Mario Alberto, Kalhor, Nima, Moktadir, Zakaria, Ogi, J. and Tsuchiya, Yoshishige (2012) NEMS-MOS and NEMS-SET hybrid functional systems for advanced information processing and extreme sensing. 2012 Energy Material Nanotechnology Meeting, Orlando, United States. 15 - 19 Apr 2012.

Armini, Silvia, Cherman, Vladimir, Volodin, Alexander, Lenci, Silvia, Pieri, Francesco, Wouters, Daan, Moonens, Joos, Neutens, Pieter, Dupré, Cecilia, Ollier, Eric, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2012) Selective surface functionalization of Si and poly-SiGe resonators for a monolithic integration of bio- and gas sensors with CMOS. Materials Research Society Spring Meeting 2012, San Francisco, United States. 08 - 12 Apr 2012.

Alkhalil, F.M., Perez-Barraza, J.I., Husain, M.K., Lin, Y.P., Lambert, N., Chong, H.M.H, Tsuchiya, Y., Williams, D.A., Ferguson, A.J. and Mizuta, H. (2012) Realization of fully tunable FinFET double quantum dots with close proximity plunger gates. 12th International Conference on Nanotechnology (IEEE NANO 2012), Birmingham, United Kingdom. 19 - 22 Aug 2012. 2 pp . (doi:10.1109/NANO.2012.6321993).

Lin, Y. P., Husain, M. K. and Alkhalil, F. M. et al. (2012) Design and fabrication of densely integrated silicon quantum dots using a VLSI compatible hydrogen silsesquioxane electron beam lithography process. [in special issue: MNE2011] Microelectronics Engineering, 98 (386-390), 386-390. (doi:10.1016/j.mee.2012.07.011).

Ghiass, Mohammad Adel, Tsuchiya, Yoshishige, Arab Hassani, Faezeh, Dupre, Cécilia, Cherman, Vladimir, Armini, Silvia, Bartsch, Sebastian, Tsamados, Dimitrios and Mizuta, Hiroshi (2012) Double-Gate Suspended Silicon Nanowire Transistors with Tunable Threshold Voltage for Chemical/Biological Sensing Applications. IEEE NANO 2012, 12th International Conference on Nanotechnology, Birmingham, UK, 20-23 Aug 2012.

Alkhalil, Feras, Perez-Barraza, J.I., Husain, M.K., Lin, Y.P., Lambert, N., Chong, H.M.H., Tsuchiya, Y., Williams, D.A., Ferguson, A.J. and Mizuta, H. (2012) Realization of Al FinFET single electron turnstile co-integrated with a close proximity electrometer SET. 38th International Conference on Micro and Nano Engineering (MNE 2012), Toulouse, France. 15 - 19 Sep 2012.

Alkhalil, Feras, Perez-Barraza, J., Husain, M. K., Lin, Y., Lambert, N., Chong, H M H, Tsuchiya, Y, Williams, D., Ferguson, A. and Mizuta, H. (2012) Al FinFET single electron devices with close proximity Si plunger gates. Silicon Quantum Information Processing Meeting, Warwick, United Kingdom. 13 Sep 2012. 1 pp .

Alkhalil, Feras, Perez-Barraza, J., Husain, M. K., Lin, Y., Lambert, N., Chong, H M H, Tsuchiya, Y., Williams, D., Ferguson, A., Saito, Shinichi and Mizuta, H. (2012) Realization of Al FinFET Single electron turnstile co-integrated with a close proximity electrometer SET. [in special issue: NanoDevices and NanoSystems] Microelectronic Engineering. (Submitted)

Alkhalil, Feras M., Perez-Barraza, Julia I., Husain, Muhammad K., Lin, Yun P., Lambert, Nick, Chong, Harold M.H., Tsuchiya, Yoshishige, Williams, David A., Ferguson, Andrew J., Saito, Shinichi and Mizuta, Hiroshi (2013) Realization of Al tri-gate single electron turnstile co-integrated with a close proximity electrometer SET. Microelectronic Engineering, 111, 64-67. (doi:10.1016/j.mee.2013.02.007).

Ghiass, Mohammad Adel, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2010) Extremely sensitive conduction-based chemical/biosensors using suspended silicon nanostructures. 2010 Annual Showcase: Nanotechnology for Healthcare, Southampton, United Kingdom.

Garcia Ramirez, Mario Alberto, Ghiass, Mohammad Adel, Moktadir, Z, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2014) Fabrication and characterisation of a double-clamped beam structure as a control gate for a high-speed non-volatile memory device. Microelectronic Engineering, 114, 22-25. (doi:10.1016/j.mee.2013.09.002).

Boodhoo, L., Crudgington, L., Chong, H.M.H, Tsuchiya, Y., Moktadir, Z., Hasegawa, T. and Mizuta, H. (2014) Fabrication and characterization of suspended oxidised silicon nanowire channels for near zero leakage logic switches. 40th Conference on Micro and Nano Engineering, Lausanne, Switzerland. 21 - 25 Sep 2014.

Moktadir, Zakaria, Mizuta, Hiroshi, Boden, Stuart A., Kalhor, Nima, Hang, Shuojin, Schmidt, Marek E., Cuong, Nguyen Tien, Chi, Dam Hieu, Otsuka, Nobuo, Muruganathan, Manoharan, Tsuchiya, Yoshishige, Chong, Harold, Rutt, Harvey N. and Bagnall, Darren M. (2012) Fabrication and ab initio study of downscaled graphene nanoelectronic devices. In, Pribat, Didier, Lee, Young-Hee and Razeghi, Manijeh (eds.) Carbon Nanotubes, Graphene, and Associated Devices V. (Proceedings of SPIE, 8462) Bellingham, US. SPIE, p. 846206. (doi:10.1117/12.956439).

Boodhoo, L., Cruddington, L., Chong, Harold M.H., Tsuchiya, Yoshishige, Moktadir, Zakaria, Hasegawa, T. and Mizuta, Hiroshi (2015) Fabrication and characterisation of suspended narrow silicon nanowire channel for low-power nano-electro-mechanical (NEM) switch applications. Microelectronic Engineering, 145, 66-70. (doi:10.1016/j.mee.2015.02.047).

Li, Zuo, Sotto, M, Liu, Fayong, Husain, Muhammad, Zeimpekis-Karakonstantinos, Ioannis, Yoshimoto, H, Tani, K., Sasago, Y, Hisamoto, D, Fletcher, J., Kataoka, M., Tsuchiya, Yoshishige and Saito, Shinichi (2017) Dataset for Random-Telegraph-Noise by Resonant Tunnelling at Low Temperatures. University of Southampton doi:10.5258/SOTON/399158 [Dataset]

Iwasaki, Takuya, Zelai, Taharh, Ye, Sheng, Tsuchiya, Yoshishige, Chong, Harold M.H. and Mizuta, Hiroshi (2017) Local hole doping concentration modulation on graphene probed by tip-enhanced Raman spectroscopy. Carbon, 111, 67-73. (doi:10.1016/j.carbon.2016.09.068).

Liu, F., Husain, M.K., Li, Z., Sotto, M.S.H., Burt, D., Fletcher, J.D., Kataoka, M., Tsuchiya, Y. and Saito, S. (2017) Transport properties in silicon nanowire transistors with atomically flat interfaces. 2017 1st Electron Devices Technology and Manufacturing Conference (EDTM2017), Toyama, Japan. 28 Feb - 02 Mar 2017. pp. 1-2 . (doi:10.1109/EDTM.2017.7947561).

Mizuta, Hiroshi, Moktadiri, Zakaria, Boden, Stuart, Kalhori, Nima, Hang, Shuojin, Schmidt, Marek, Cuong, Nguyen Tien, Chi, Dam Hieu, Otsuka, Nobuo, Manoharan, Muruagnathan, Tsuchiya, Yoshishige, Chong, Harold, Rutt, Harvey and Bagnall, Darren (2012) Downscaled graphene nanodevices: fabrication and ab initio study. IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Xi'an, China. 29 Oct - 01 Nov 2012. 4 pp . (doi:10.1109/ICSICT.2012.6467940).

Saito, Shin, Li, Zuo, Sotto, Moise, Liu, Fayong, Husain, Muhammad and Tsuchiya, Yoshishige (2016) Novel transport properties in quantum confined silicon channels at low temperatures. UK-Japan workshop, Cambridge, United Kingdom.

Li, Zuo, Husain, Muhammad, Yoshimoto, Hiroyuki, Tani, Kazuki, Sasago, Yoshitaka, Hisamoto, Digh, Fletcher, Jonathan, Kataoka, Masaya, Tsuchiya, Yoshishige and Saito, Shinichi (2017) Single carrier trapping and de-trapping in scaled silicon complementary metal-oxide-semiconductor field-effect transistors at low temperatures. Semiconductor Science and Technology, 1-7. (doi:10.1088/1361-6641/aa6910).

Tsuchiya, Yoshishige, Harada, Naoaki, Giotis, Christos, Lamb, Joshua, Arab Hassani, Faezeh, Shikida, Mitsuhiro, Dupré, Cecilia, Ollier, Eric, Bartsch, Sebastian, Mihai Ionescu, Adrian and Mizuta, H. (2017) RF characterisation of CMOS-compatible silicon-on-insulator nanoelectromechanical resonators. In 43rd International Conference on Micro and Nanoengineering (MNE2017), Braga, Portugal. Sep. 18-22 2017. (In Press)

Zelai, Taharh, Iwasaki, Takuya, Boden, Stuart, Chong, Harold, Mizuta, H. and Tsuchiya, Yoshishige (2017) Tip-Enhanced Raman characterization of He-ion-irradiated CVD graphene channels. 43rd International Conference on Micro and Nanoengineering, , Braga, Portugal. 18 - 22 Sep 2017. 1 pp .

Saito, Shinichi, Li, Zuo, Yoshimoto, Hiroyuki, Tomita, Isao, Tsuchiya, Yoshishige, Sasago, Yoshitaka, Arimoto, Hideo, Liu, Fayong, Husain, Muhammad, Hisamoto, Digh, Rutt, Harvey and Kurihara, Sususu (2017) Quantum dipole in a silicon transistor: Quantum simulation for strongly correlated system. 2017 International Conference on Solid State Devices and Materials, Japan. 19 - 22 Sep 2017.

Li, Zuo, Sotto, Moise, Sala Henri, Liu, Fayong, Husain, Muhammad Khaled, Yoshimoto, Hiroyuki, Sasago, Yoshitaka, Hisamoto, Digh, Tomita, Isao, Tsuchiya, Yoshishige and Saito, Shinichi (2018) Random telegraph noise from resonant tunnelling at low temperatures. Scientific Reports, 8, [250]. (doi:10.1038/s41598-017-18579-1).

Tsuchiya, Yoshishige, Feng, Yilin, Giotis, Christos, Harada, Naoaki, Shikida, Mitsuhiro, Dupré, Cécilia, Ollier, Eric, Arab Hassani, Faezeh and Mizuta, Hiroshi (2018) Characteristic resonance features of SOI-CMOS-compatible silicon nanoelectromechanical doubly-clamped beams up to 330 MHz. In 2018 IEEE Micro Electro Mechanical Systems, MEMS 2018. vol. 2018-January, IEEE. pp. 515-518 . (doi:10.1109/MEMSYS.2018.8346603).

Zhang, Yichi, Green, Nicolas, Saito, Shinichi and Tsuchiya, Yoshishige (2017) Surface-modified Scalable Silicon Heat Sink Technology for Electronics Cooling. University of Southampton doi:10.5258/SOTON/D0080 [Dataset]

Li, Zuo, Liu, Fayong, Saito, Shinichi, Husain, Muhammad, Sotto, Moise, Sala Henri and Tsuchiya, Yoshishige (2017) Random-Telegraph-Noise by Resonant Tunnelling at Low Temperatures. 2017 IEEE Electron Devices Technology and Manufacturing Conference, , Toyama, Japan. 28 Feb - 02 Mar 2017. pp. 1-3 . (doi:10.1109/EDTM.2017.7947569).

Liu, Fayong, Husain, Muhammad, Li, Zuo, Sotto, Moise, Sala Henri, Burt, Daniel, Fletcher, J.D., Kataoka, M., Tsuchiya, Yoshishige and Saito, Shinichi (2018) Dataset for Transport properties in silicon nanowire transistors with atomically flat interfaces. University of Southampton doi:10.5258/SOTON/402332 [Dataset]

Liu, Fayong, Ibukuro, Kouta, Husain, Muhammad, Li, Zuo, Hillier, Joseph, Tomita, Isao, Tsuchiya, Yoshishige, Rutt, Harvey and Saito, Shinichi (2018) Manipulation of random telegraph signals in a silicon nanowire transistor with a triple gate. Nanotechnology, 29 (47). (doi:10.1088/1361-6528/aadfa6).

Ibukuro, Kouta, Liu, Fayong, Husain, Muhammad, Li, Zuo, Tomita, Isao, Tsuchiya, Yoshishige, Rutt, Harvey and Saito, Shinichi (2018) Dataset for Manipulation of random telegraph signals in a silicon nanowire transistor with a triple gate. University of Southampton doi:10.5258/SOTON/D0555 [Dataset]

Ibukuro, Kouta, Liu, Fayong, Husain, Muhammad, Li, Zuo, Tsuchiya, Yoshishige, Rutt, Harvey and Saito, Shinichi (2018) Random-telegraph-noise and wave-particle duality found in a silicon nano-wire. International conference on solid state devices and materials 2018, , Tokyo, Japan. 08 - 12 Sep 2018. 2 pp .

Saito, Shinichi, Li, Zuo, Yoshimoto, Hiroyuki, Tomita, Isao, Tsuchiya, Yoshishige, Sasago, Yoshitaka, Arimoto, Hideo, Liu, Fayong, Husain, Muhammad, Hisamoto, Digh, Rutt, Harvey and Kurihara, Sususu (2018) Quantum dipole effects in a silicon transistor under high electric fields. Journal of the Physical Society of Japan. (doi:10.7566/JPSJ.87.094801).

Saito, Shinichi, Li, Zuo, Yoshimoto, Hiroyuki, Sasago, Yoshitaka, Arimoto, Hideo, Tomita, Isao, Liu, Fayong, Husain, Muhammad, Tani, Kazuki, Hisamoto, Digh, Tsuchiya, Yoshishige, Rutt, Harvey and Kurihara, Sususu (2018) Dataset for Quantum Dipole Effects in a Silicon Transistor under High Electric Fields. University of Southampton doi:10.5258/SOTON/405381 [Dataset]

Ibukuro, Kouta, Liu, Fayong, Husain, Muhammad, Li, Zuo, Tsuchiya, Yoshishige, Rutt, Harvey and Saito, Shinichi (2018) Raw data for 'Random-Telegraph-Noise and Wave-Particle-Duality Found in a Silicon Nano-Wire'. University of Southampton doi:10.5258/SOTON/D0507 [Dataset]

Zhang, Yichi, Green, Nicolas, Saito, Shinichi and Tsuchiya, Yoshishige (2017) Surface-modified scalable silicon heat sink technology for electronics cooling. In 43rd International Conference on Micro and Nanoengineering (MNE2017), Braga, Portugal, Sep. 18-22 2017. (In Press)

Ibukuro, Kouta, Husain, Muhammad K, Hillier, Joseph, William, Li, Zuo, Liu, Fayong, Tomita, Isao, Tsuchiya, Yoshishige, Rutt, Harvey and Saito, Shinichi (2019) Single electron memory effect using random telegraph signals at room temperature. Frontiers in Physics, 7 (152), 1-11. (doi:10.3389/fphy.2019.00152).

Ibukuro, Kouta, Husain, Muhammad, Hillier, Joseph, William, Li, Zuo, Liu, Fayong, Tomita, Isao, Tsuchiya, Yoshishige, Rutt, Harvey and Saito, Shinichi (2019) Dataset for 'Single electron memory effect using random telegraph signals at room temperature'. University of Southampton doi:10.5258/SOTON/D0843 [Dataset]

Hillier, Joseph, William (2019) Dataset for: Tuneable single electron characteristics through electrical stress in silicon transistors towards a quantum field programmable gate array. University of Southampton doi:10.5258/SOTON/D1122 [Dataset]

Li, Z., Husain, M.K., Liu, F., Giblin, S., Fletcher, J., Kataoka, M., Andreev, A., Ibukuro, K., Hillier, J., Tomita, I., Rutt, H.N., Tsuchiya, Y. and Saito, S. (2020) Artificial molecular bonding in Si quantum dots tuned by double-layer gates. Applied Physics Letters.

Ibukuro, Kouta, Hillier, Joseph, William, Liu, Fayong, Husain, Muhammad Khaled, Li, Zuo, Tomita, Isao, Tsuchiya, Yoshishige, Rutt, Harvey and Saito, Shinichi (2020) Dataset for Random telegraph signals caused by a single dopant in a metal oxide semiconductor field effect transistor at low temperature. University of Southampton doi:10.5258/SOTON/D1193 [Dataset]

Ibukuro, Kouta, Hillier, Joseph William, Liu, Fayong, Husain, Muhammad K., Li, Zuo, Tomita, Isao, Tsuchiya, Yoshishige, Rutt, Harvey and Saito, Shinichi (2020) Random telegraph signals caused by a single dopant in a metal oxide semiconductor field effect transistor at low temperature. AIP Advances. (In Press)

Ibukuro, Kouta (2020) Dataset for: Silicon single-electron random number generator based on random telegraph signals at room temperature. University of Southampton doi:10.5258/SOTON/D1488 [Dataset]

Ibukuro, Kouta, Liu, Fayong, Husain, Muhammad K, Sotto, Moise Sala Henri, Hillier, Joseph William, Li, Zuo, Tomita, Isao, Tsuchiya, Yoshishige, Rutt, Harvey and Saito, Shinichi (2020) Silicon single-electron random number generator based on random telegraph signals at room temperature. AIP Advances, 10 (11), [115101]. (doi:10.1063/5.0023647).

Hillier, Joseph William (2021) Dataset for: Probing hole spin transport of disorder quantum dots via Pauli spin-blockade in standard silicon transistors. University of Southampton doi:10.5258/SOTON/D1485 [Dataset]

Ye, Sheng (2020) Dataset for: Direct observation of surface charge redistribution in active nanoscale conducting channels by Kelvin Probe Microscopy. University of Southampton doi:10.5258/SOTON/D1600 [Dataset]

Ye, Sheng, Yan, Xingzhao, Husain, Muhammad K, De Groot, Kees, Saito, Shinichi and Tsuchiya, Yoshishige (2021) Direct observation of surface charge redistribution in active nanoscale conducting channels by Kelvin Probe Force Microscopy. Nanotechnology, 32 (32), [325206]. (doi:10.1088/1361-6528/abfd55).

Hillier, Joseph William, Ono, Keiji, Ibukuro, Kouta, Liu, Fayong, Li, Zuo, Husain, Muhammad K, Rutt, Harvey, Tomita, Isao, Tsuchiya, Yoshishige, Ishibashi, Koji and Saito, Shinichi (2021) Probing hole spin transport of disorder quantum dots via Pauli spin-blockade in standard silicon transistors. Nanotechnology, 32 (26), [260001]. (doi:10.1088/1361-6528/abef91).

Hillier, Joseph, William (2021) Investigating stability and tunability of quantum dot transport in silicon MOSFETs via the application of electrical stress. University of Southampton doi:10.5258/SOTON/D1910 [Dataset]

Zelai, Taharh, Iwasaki, Takuya, Boden, Stuart, Chong, Harold, MIZUTA, HIROSHI and Tsuchiya, Yoshishige (2017) Tip-Enhanced Raman characterization of He-ion-irradiated CVD graphene channels. University of Southampton doi:10.5258/SOTON/D0079 [Dataset]

Hillier, Joseph, William, Ibukuro, Kouta, Liu, Fayong, Husain, Muhammad K, Byers, James J, Rutt, Harvey, Tomita, Isao, Tsuchiya, Yoshishige and Saito, Shinichi (2021) Investigating stability and tunability of quantum dot transport in silicon MOSFETs via the application of electrical stress. Journal of Physics D: Applied Physics, 55, [105107].

Ben, Fang, Fernando, James, Ou, Jun-Yu and Tsuchiya, Yoshishige (2021) Development of Systematic Fitting Model for Nonlinear Nanoelectromechanical Resonance Analysis. 2021 IEEE 34th International Conference on Micro Electro Mechanical Systems (MEMS), Gainesville and Online, Gainesville, United States. 25 - 29 Jan 2021. pp. 611-614 . (doi:10.1109/MEMS51782.2021.9375461).

Ben, Fang, Fernando, James, Ou, Jun-Yu and Tsuchiya, Yoshishige (2021) Analysis of hysteric behaviour in nonlinear resonance of silicon nanoelectromechanical resonators. 47th Micro and Nano Engineering Conference, Turin and Online, Turin, Italy. 20 - 23 Sep 2021.

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