ECS Intranet:
Phase Change Memory Materials via Non-Aqueous Electrodeposition into Nano-structured Templates

This project is concerned with developing non-aqueous electrochemical methods and suitably tailored reagents to facilitate spatially selective electrodeposition of binary (e.g. In2(Se,Te)3, Sb2(Se,Te)3, Ge(Se,Te)) and ternary chalcogenide materials (e.g. Ge2Sb2Te5, doped Sb2Te3) for applications in solid-state phase change memory (PCM). The key objectives are to demonstrate successful selective deposition of the target materials inside nano-scale (down to 2 nm) confined cell structures and to establish the effect of down-scaling pore size on the deposition process. Successful electrodeposition of well-defined compound semiconductor alloy compositions of these types will provide a significant new enabling technology which could also have a major impact on the other applications requiring semiconductor alloy deposition on a nano-scale.

Relevant Links

• Growth and characterization of a novel In2Se3 structure
• Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5 phase change memory†
• Contact resistance measurement of Ge2Sb2Te5 phase change material to TiN electrode by spacer etched nanowire

Partners

• University of Warwick
• University of Nottingham

Funding

• EPSRC EP/I010890/1
• EPSRC EP/N035437/1

Principal Investigators

• Professor CH "Kees" De Groot
• Phil Bartlett (Chemistry)
• Gill Reid (Chemistry)
• Andrew Hector (Chemistry)
• David Smith (Physics)
• Ruomeng Huang
• Yasir Noori

Other Investigators

• Katarina Cicvaric
• Daniel Newbrook